| Silicone Packaging
Materials with Low Alpha Particle Emissions Prevent `Soft Errors'
in Memory Devices |
ABSTRACT
The
Tessera µBGA chip-scale package is currently in mass production
for flash memories, static random-access memories (SRAM) and dynamic
random-access memories (DRAM). However, in DRAM devices, the issue
of soft errors, caused by a particles emitted from the packaging
material, adds another performance requirement to the materials.
The main sources of alpha particles are the two radioactive elements
uranium, U, and thorium, Th, which are naturally present in almost
all materials in small concentrations. For silicones to be used
in the packaging of DRAM chips, requires that the silicone employed
contain sufficiently low levels of U and Th.
By
Drs. Ann W. Norris and Udo Pernisz, Dow Corning Corp., Midland,
Michigan
Silicones have a long history of successful
use in the electronics industry. They offer many attributes that
make them excellent materials for applications in electronics, including
high ionic purity, low moisture absorption and consistent performance
over a wide temperature range.
While the many available cure chemistries give
silicones the properties required for use in electronics, an addition
cure is typically employed. This cure is attractive because it contains
no cure by-products, and because heat accelerates the cure process.
Furthermore, an addition cure system can be delivered in either
a one-part or a two-part formulation.
Primerless
Adhesives
Silicones can be made into excellent primerless
adhesives by utilizing adhesion promoter technology. When used as
adhesives, sealants or encapsulants, silicones are typically filled
with reinforcing silica.
Microelectronics packaging is an expanding field,
in which the recent trend to smaller, lighter and faster devices
has led to the adoption of CSPs like the Tessera µBGA package. This
package requires a compliant spacer and encapsulant for optimal
reliability and performance. Silicones are proving to be a material
of choice for this package1.
Encapsulants, die attach adhesives and spacer
materials are commercially available and are being successfully
employed in the production of µBGA packages. Figure 1 shows a diagram
of the package design with compliant spacers and encapsulant separating
the silicon die and the flexible TAB tape with the solder ball array.
Figure 2 shows the encapsulant being dispensed during package assembly.
 |
Figure
1.
The µBGA
package employs silicone-based materials for its encapsulant,
spacers and die attach. |
Figure
2.
Dow Corning
6811 Microelectronic encapsulant being dispensed. |
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DRAM
Requirements
In the late 1970s and early 1980s, concern and
evidence of "soft" errors in DRAM memory chips had already been
discussed and documented. Soft errors are defined as random, non-recurring
changes of single bits of the information stored in a memory chip,
leading to data errors.
Researchers have observed that a particles,
when allowed to penetrate the die surface, can create enough electron-hole
pairs near a storage node to cause single-bit errors,2-3 at
random, in the device. In DRAMs, the occurrence of soft errors is
directly related to the number of bits per device, and for large
memories, even small amounts of a
particle radiation can produce a high soft-error rate.
Thus, it is imperative that the materials developed
for DRAM use possess very low alpha particle emission rates. The
main sources of alpha particles are uranium, U, and thorium, Th,
which are naturally present in almost all materials in small concentrations.
For silicones to be used in packaging DRAM chips
depends, therefore, on these materials meeting the requirement of
sufficiently low levels of U and Th concentration.
Experimental
Measurements
Samples of Dow Corning 6810, 6811, 6910, and 7910
silicones were submitted to an outside test laboratory for the analysis
of U and Th. Duplicate samples were measured by inductively coupled
plasma-mass spectrometry (ICP-MS) using a Seiko SPQ6500 instrument.
The results (average values) obtained are shown in Table 1.
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Table
1.
Average U and Th Values of Silicone Samples
|
| Product |
U, ppb |
Th, ppb |
| 6810 Chip-Scale Encapsulant |
22 |
54 |
| 6811 Microelectronic Encapsulant |
0.1 |
1.3 |
| 7910 Die Attach Adhesive |
0.08 |
0.63 |
| 6910 Chip-Scale Spacer |
0.06 |
0.7 |
The 6810 encapsulant was not developed for DRAM
applications but was included as a reference material. The 6811,
7910 and 6910 products were developed for DRAM applications, making
it critical that they contain a low U and Th content.
When these materials, in 75-mil thick sheets
(1.9 mm) were sent to an outside lab for a
particle emission measurements, the 6810 encapsulant was measured
to have a flux density of 0.012 cm-2 h-1;
the three other products, however, were below the detection limits
of the instrument (<5x10-3 cm-2 h-1)4.
In discussing the requirements for DRAM-grade
material, White et al. stated that a
particle counts below 0.001 cm-2 h-1 are required
for applications in DRAM packaging.5
The last three products shown in Table 1 are
believed to comply with industry standards, however, the alpha flux
density was below the detection limit and therefore, a theoredical
calculation needed to be conducted.
More recent information on the effects of a
particles on DRAM devices suggests lower values for current chip
design may be required, because smaller design rules lower the critical
charge acceptable in an a
particle event.
Emission
Flux Density
For the application of elastomers as IC packaging
material, the a
particle flux density at the interface between chip and elastomer
is relevant.
Flux density measures the number of particles
emitted through the elastomer interface per unit area and unit time
in [cm-2 h-1]. The goal is to derive this
number from the original emission rates of U and Th which emit a
particles in their decay process.
The alpha particle emission rates are given
as the number of particles/ second from one gram of the substance.
For naturally occurring uranium (which consists of 99.27% of
238U) and for thorium (232Th) these values
for 1 g of material are6
U: Ep = 4.2 MeV R0 = 2.51x104
s-1 T1/2 = 4.5x109 a
Th: Ep = 4.0 MeV R0 = 4.11x103
s-1 T1/2 = 1.4+1010 a
Also given are the density p
and half-life T1/2 of the two elements, and the kinetic
energy Ep of the a
particles; the values for uranium apply to the 238U isotope.
(Natural uranium contains 0.72% 235U
and a trace amount of 234U). The a
particles are radiated into the full 4¶ steradian of surrounding
space, with the emitter taken to be a point source.
At the energy emitted, their mean range L in
typical Si-based polymeric materials is on the order of 20 µm; exact
values for materials of known atomic composition can be calculated
from data for a standard reference substance (such as air in which
L = 2.4 cm)6.
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